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Typical Performance Characteristics
Figure 1. On-Region Characteristics
1.6
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3.0
1.4
1.2
V GS = 10V
5V
2.5
V GS = 3V
4V
4.5V
5V
6V
1.0
0.8
0.6
4V
2.0
10V
0.4
3V
1.5
8V
9V
0.2
0.0
2V
1.0
7V
0
1
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
V DS . DRAIN-SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
3.0
V GS = 10V
I D . DRAIN-SOURCE CURRENT(A)
Figure 4. On-Resistance Variation with
Gate-Source Voltage
3.0
2.5
2.0
I D = 500 mA
2.5
I D = 500 mA
2.0
1.5
I D = 50 mA
1.5
1.0
0.5
1.0
-50
0
50
100
150
2
4
6
8
10
T J . JUNCTION TEMPERATURE( C)
Figure 5. Transfer Characteristics
1.0
o
V GS . GATE-SOURCE VOLTAGE (V)
Figure 6. Gate Threshold Variation with
Temperature
2.5
T J = -25 C
150 C
0.8
V DS = 10V
o
o
V GS = V DS
25 C
125 C
75 C
0.6
0.4
o
o
o
2.0
I D = 0.25 mA
I D = 1 mA
1.5
0.2
0.0
2
3
4
5
6
1.0
-50
0
50
100
150
T J . JUNCTION TEMPERATURE( C)
V GS . GATE-SOURCE VOLTAGE (V)
? 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
3
o
www.fairchildsemi.com
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